inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK741 description drain current C i d =7a@ t c =25 drain source voltage- : v dss = 250v(min) fast switching speed applications high speed power switching absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 250 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 7 a p tot total dissipation@tc=25 50 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.0 /w r th j-a thermal resistance,junction to ambient 62.5 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK741 electrical characteristics (t c =25 ) symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0; i d = 10ma 250 v v gs( th ) gate threshold voltage v ds =10 v gs ; i d =1ma 2.0 4.0 v r ds( on ) drain-source on-stage resistance v gs =10v; i d =4a 0.40 0.55 i gss gate source leakage current v gs = 16v;v ds = 0 10 ua i dss zero gate voltage drain current v ds =200v; v gs = 0 250 ua v sd diode forward voltage i f =7a; v gs =0 1.2 v tr rise time v gs =10v;i d =4a; r l =7.5 48 ns ton turn-on time 60 ns tf fall time 50 ns toff turn-off time 120 ns pdf pdffactory pro www.fineprint.cn
|
